EDS5108ABTA-75 데이터 시트보기 (PDF) - Elpida Memory, Inc

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EDS5108ABTA-75

512M bits SDRAM / 54-pin TSOP

Elpida Memory, Inc 

EDS5104ABTA, EDS5108ABTA, EDS5116ABTA

Electrical Specifications

• All voltages are referenced to VSS (GND).

• After power up (refer to the Power-up Sequence).

Absolute Maximum Ratings

Parameter

Voltage on any pin relative to VSS

Symbol

VT

Rating

Unit

–0.5 to VDD + 0.5 (≤ 4.6 (max.))

V

Note

Supply voltage relative to VSS

VDD

–0.5 to +4.6

V

Short circuit output current

IOS

50

mA

Power dissipation

PD

1.0

W

Operating temperature

TA

0 to +70

°C

Storage temperature

Tstg

–55 to +125

°C

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

Recommended Operating Conditions (TA = 0 to 70°C)

Parameter

Symbol

min.

max.

Unit

Supply voltage

VDD, VDDQ

3.0

3.6

V

VSS, VSSQ

0

0

V

Input high voltage

VIH

2.0

VDD + 0.3

V

Input low voltage

VIL

–0.3

0.8

V

Notes: 1. The supply voltage with all VDD and VDDQ pins must be on the same level.

2. The supply voltage with all VSS and VSSQ pins must be on the same level.

3. VIH (max.) = VDD + 2.0 V for pulse width ≤ 3ns at VDD.

4. VIL (min.) = VSS – 2.0 V for pulse width ≤ 3ns at VSS.

Notes

1

2

3

4

Preliminary Data Sheet E0250E10 (Ver. 1.0)

4

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