EDE1104AASE-6E-E 데이터 시트보기 (PDF) - Elpida Memory, Inc

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EDE1104AASE-6E-E

1G bits DDR2 SDRAM

Elpida Memory, Inc 

EDE1104AASE, EDE1108AASE

Recommended DC Operating Conditions (SSTL_18)

Parameter

Symbol

min.

typ.

max.

Unit

Notes

Supply voltage

VDD

1.7

1.8

1.9

V

4

Supply voltage for output

VDDQ

1.7

1.8

1.9

V

4

Input reference voltage

VREF

0.49 × VDDQ

0.50 × VDDQ 0.51 × VDDQ

V

1, 2

Termination voltage

VTT

VREF − 0.04

VREF

VREF + 0.04

V

3

DC input logic high

VIH (DC)

VREF + 0.125



VDDQ + 0.3

V

DC input low

AC input logic high

-6E

-5C

AC input low

-6E

-5C

VIL (DC)

VIH (AC)

VIH (AC)

VIL (AC)

VIL (AC)

−0.3



VREF + 0.200



VREF + 0.250











VREF – 0.125 V



V



V

VREF – 0.200 V

VREF − 0.250 V

Notes: 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically

the value of VREF is expected to be about 0.5 × VDDQ of the transmitting device and VREF are expected

to track variations in VDDQ.

2. Peak to peak AC noise on VREF may not exceed ±2% VREF (DC).

3. VTT of transmitting device must track VREF of receiving device.

4. VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and

VDDL tied together.

Data Sheet E0404E20 (Ver. 2.0)

6

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