EBE21AD4AGFB-4A-E 데이터 시트보기 (PDF) - Elpida Memory, Inc
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EBE21AD4AGFB-4A-E Datasheet PDF : 23 Pages
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EBE21AD4AGFB
Byte No.
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
Function described
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value
Minimum row active to row active
delay (tRRD)
0 0 0 1 1 1 1 0 1EH
Minimum /RAS to /CAS delay (tRCD) 0 0 1 1 1 1 0 0 3CH
Minimum active to precharge time
(tRAS)
0 0 1 0 1 1 0 1 2DH
-6E, -5C
-4A
0 0 1 0 1 0 0 0 28H
Module rank density
0 0 0 0 0 0 0 1 01H
Address and command setup time
before clock (tIS)
0 0 1 0 0 0 0 0 20H
-6E
-5C
0 0 1 0 0 1 0 1 25H
-4A
Address and command hold time
after clock (tIH)
-6E
-5C
0 0 1 1 0 1 0 1 35H
0 0 1 0 1 0 0 0 28H
0 0 1 1 1 0 0 0 38H
-4A
0 1 0 0 1 0 0 0 48H
Data input setup time before clock
(tDS)
0 0 0 1 0 0 0 0 10H
-6E, -5C
-4A
0 0 0 1 0 1 0 1 15H
Data input hold time after clock (tDH)
-6E
0
0
0
1
1
0
0
0
18H
-5C
0 0 1 0 0 0 1 1 23H
-4A
0 0 1 0 1 0 0 0 28H
Write recovery time (tWR)
0 0 1 1 1 1 0 0 3CH
Internal write to read command delay
(tWTR)
0 0 0 1 1 1 1 0 1EH
-6E, -5C
-4A
0 0 1 0 1 0 0 0 28H
Internal read to precharge command
delay (tRTP)
0
0
0
1
1
1
1
0
1EH
Memory analysis probe
characteristics
0 0 0 0 0 0 0 0 00H
Extension of Byte 41 and 42
0 0 0 0 0 0 0 0 00H
Active command period (tRC)
-6E, -5C
0 0 1 1 1 1 0 0 3CH
-4A
0 0 1 1 0 1 1 1 37H
Auto refresh to active/
Auto refresh command cycle (tRFC)
0
1
1
0
1
0
0
1
69H
SDRAM tCK cycle max. (tCK max.) 1 0 0 0 0 0 0 0 80H
Dout to DQS skew
-6E
0 0 0 1 1 0 0 0 18H
-5C
0 0 0 1 1 1 1 0 1EH
-4A
Data hold skew (tQHS)
-6E
-5C
0 0 1 0 0 0 1 1 23H
0 0 1 0 0 0 1 0 22H
0 0 1 0 1 0 0 0 28H
-4A
0 0 1 0 1 1 0 1 2DH
PLL relock time
0 0 0 0 1 1 1 1 0FH
Comments
7.5ns
15ns
45ns
40ns
1GB
0.20ns*1
0.25ns*1
0.35ns*1
0.28ns*1
0.38ns*1
0.48ns*1
0.10ns*1
0.15ns*1
0.18ns*1
0.23ns*1
0.28ns*1
15ns*1
7.5ns*1
10ns*1
7.5ns*1
TBD
Undefined
60ns*1
55ns*1
105ns*1
8ns*1
0.24ns*1
0.30ns*1
0.35ns*1
0.34ns*1
0.40ns*1
0.45ns*1
15µs
Preliminary Data Sheet E0897E10 (Ver. 1.0)
6
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