DTC115TL-AE3-R 데이터 시트보기 (PDF) - Unisonic Technologies
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DTC115TL-AE3-R Datasheet PDF : 3 Pages
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DTC115T
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless others specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
Emitter-base voltage
VCEO
50
V
VEBO
5
V
Collector current
Collector Power dissipation
IC
100
mA
PC
200
mW
Junction temperature
TJ
+150
°C
Storage temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS (TA=25°C, unless others specified)
PARAMETER
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
BVCBO
BVCEO
Emitter-Base Breakdown Voltage
Collector Cutoff Current
BVEBO
ICBO
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
IEBO
VCE(SAT)
DC Current transfer Ratio
hFE
Input Resistance
R1
Transition Frequency
fT
Note: Transition frequency of the device.
TEST CONDITIONS
IC=50μA
IC=1mA
IE=50μA
VCB=50V
VEB=4V
IC=1mA, IB=0.1mA
VCE=5V, IC=1mA
VCE=10V, IE=-5mA, f=100MHz
MIN TYP MAX UNIT
50
V
50
V
5
V
0.5 μA
0.5 μA
0.3 V
100 250 600
70 100 130 KΩ
250
MHZ
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-063.C
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