DIM200PHM33-F000(2004) 데이터 시트보기 (PDF) - Dynex Semiconductor

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DIM200PHM33-F000
(Rev.:2004)

Half Bridge IGBT Module

Dynex Semiconductor 

DIM200PHM33-F000

Replaces June 2003 version, issue PDS5606-2.1

FEATURES

I Soft Punch Through Silicon

I 10µs Short Circuit Withstand

I Isolated MMC Base with AlN Substrates

I High Thermal Cycling Capability

DIM200PHM33-F000

Half Bridge IGBT Module

KEY PARAMETERS

VCES

3300V

VCE(sat) *

(typ)

2.8V

IC

(max)

200A

IC(PK)

(max)

400A

* Measured at auxiliary terminals.

PDS5606-3.1 April 2004

APPLICATIONS

I High Reliability Inverters

I Motor Controllers

I Traction Auxiliaries

The Powerline range of high power modules includes half

bridge, chopper, dual, single and bi-directional switch

configurations covering voltages from 600V to 3300V and

currents up to 3600A.

The DIM200PHM33-F000 is a half bridge 3300V soft punch

through, n channel enhancement mode, insulated gate bipolar

transistor (IGBT) module. The IGBT has a wide reverse bias safe

operating area (RBSOA) plus full 10µs short circuit withstand.

This device is optimised for traction drives and other applications

requiring high thermal cycling capability.

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM200PHM33-F000

Note: When ordering, please use the whole part number.

1(E1/C2)

2(C1)

5(E1)

4(G1)

8(C1)

3(E2)

7(E2)

6(G2)

Fig. 1 Half bridge circuit diagram

Outline type code: P

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

1/9

www.dynexsemi.com

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