DG612AK 데이터 시트보기 (PDF) - Vishay Semiconductors
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DG612AK Datasheet PDF : 8 Pages
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DG611/612/613
Vishay Siliconix
TEST CIRCUITS
+5 V
+15 V
VL
V+
"2 V
S
D
IN
GND
V–
V–
VO
RL
CL
300 W
5V
Logic Input
0V
VS= "2 V
Switch Output
0V
FIGURE 2. Switching Time
50%
tr < 10 ns
tf < 10 ns
90%
20%
tON
tOFF
CL (includes fixture and stray capacitance)
VO = VS
RL
RL + rDS(on)
Rg
Vg
5V
+5 V
VL
S
IN
GND
+15 V
V+
D
V–
–3 V
VO
CL
1 nF
FIGURE 3. Charge Injection
+5 V
C
VS
Rg = 50 W
1 V, 4 V
NC
1 V, 4 V
XTALK Isolation = 20 log
VS
VO
C = RF bypass
VL
S1
IN1
S2
IN2
GND
+15 V
C
V+
D1
D2
V–
C
–3 V
FIGURE 4. Crosstalk
50 W
VO
RL
APPLICATIONS
High-Speed Sample-and-Hold
In a fast sample-and-hold application, the analog switch
characteristics are critical. A fast switch reduces aperture
uncertainty. A low charge injection eliminates offset (step)
errors. A low leakage reduces droop errors. The CLC111, a fast
input buffer, helps to shorten acquisition and settling times. A
low leakage, low dielectric absorption hold capacitor must
be used. Polycarbonate, polystyrene and polypropylene
are good choices. The JFET output buffer reduces droop
due to its low input bias current. (See Figure 5.)
Pixel-Rate Switch
Windows, picture-in-picture, title overlays are economically
generated using a high-speed analog switch such as the
DG613. For this application the two video sources must be
sync locked. The glitch-less analog switch eliminates halos.
(See Figure 6.)
Document Number: 70057
S-00399—Rev. G, 13-Sep-99
GaAs FET Drivers
Figure 7 illustrates a high-speed GaAs FET driver. To turn the
GaAs FET on 0 V are applied to its gate via S1, whereas to turn
it off, –8 V are applied via S2. This high-speed, low-power
driver is especially suited for applications that require a large
number of RF switches, such as phased array radars.
www.vishay.com S FaxBack 408-970-5600
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