DG509AE(2001) 데이터 시트보기 (PDF) - Maxim Integrated
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DG509AE Datasheet PDF : 11 Pages
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Monolithic CMOS Analog Multiplexers
ABSOLUTE MAXIMUM RATINGS
Voltage Referenced to V-
V+ ....................................................................................+44V
GND ................................................................................ +25V
Digital Inputs, VS and VD (Note 1)..................-2V to (V+ + 2V)
or 20mA, whichever occurs first
Current (any terminal, except S or D) .................................30mA
Continuous Current, S or D .................................................20mA
Peak Current, S or D (pulsed at 1ms, 10% duty cycle max) ..40mA
Continuous Power Dissipation (TA = +70°C)
Plastic DIP (derate 10.53mW/°C above +70°C) ..........842mW
QFN (derate 19.2mW/°C above +70°C) ....................1538mW
Narrow SO (derate 8.70mWI°C above +70°C) ............696mW
Wide SO (derate 9.52mW/°C above +70°C)................762mW
CERDIP (derate 10.00mW/°C above +70°C) ...............800mW
Operating Temperature Ranges:
DG50_ACJ/CWE/CGE ........................................0°C to +70°C
DG50_ABK ......................................................-20°C to +85°C
DGS0_ADJ/DY/EWE/EGE ................................-40°C to +85°C
DG50_AAK ....................................................-55°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1: Signals on S_, D_, or IN_ exceeding V+ or V- are clamped by internal diodes. Limit forward-diode current to maximum current
ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V+ = 15V, V- = -15V, GND = OV, TA = +25°C, unless otherwise noted.)
PARAMETER SYMBOL
CONDITIONS
SWITCH
Analog Signal Range VANALOG
Drain-Source On-
Resistance
RDS(ON)
Sequence each
switch on,
VAL = 0.8V,
VAH = 2.4V
(Note 4)
VD = 10V,
IS = -200µA
VD = 10V,
IS = -200µA
DG508AA
DG509AA
DG508AD/E/B/C
DG509AD/E/B/C
MIN TYP MAX MIN TYP MAX
-15
+15 -15
+15
170 300
170 350
130 300
130 350
Greatest Change in
Drain-Source On-
Resistance
Between Channels
∆RDS(ON)
∆RDS(ON)
=
RDS(ON)
max −RDS(ON)
RDS(ON)
min
,
-10V ≥ VS ≥ 10V
6
6
Source Off-
Leakage Current
IS(OFF) VEN = 0V
VS = 10V, VD = -10V
0.002 0.5
0.002 1
VS = -10V, VD = 10V -0.5 -0.005
-1 -0.005
Drain Off- DG508A
Leakage
Current DG509A
ID(OFF)
VEN = 0V
VD = 10V, VS = -10V
VD = 10V, VS = -10V
VD = 10V, VS = -10V
VD = -10V, VS = 10V
0.01 2
-2 -0.015
0.005 2
-2 -0.008
0.01 5
-5 -0.015
0.005 5
-5 -0.008
Drain On-
Leakage
Current
DG508A
DG509A
ID(ON)
Sequence each
switch on,
VAL = 0.8V
VAH = 2.4V
(Note 2)
VS(all) = VD = 10V
VS(all) = VD = -10V
VS(all) = VD = 10V
VS(all) = VD = -10V
0.015 2
-2 -0.03
0.007 2
-2 -0.015
0.015 5
-5 -0.03
0.007 5
-5 -0.015
UNITS
V
Ω
%
nA
nA
nA
2 _______________________________________________________________________________________
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