DG412AK 데이터 시트보기 (PDF) - Vishay Semiconductors
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DG412AK Datasheet PDF : 8 Pages
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DG411/412/413
Vishay Siliconix
SPECIFICATIONSa FOR UNIPOLAR SUPPLIES
Test Conditions
Unless Specified
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Parameter
Analog Switch
Symbol
V+ = 12 V, V– = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb Typc Mind Maxd Mind Maxd Unit
Analog Signal Rangee
Drain-Source
On-Resistance
VANALOG
rDS(on)
Dynamic Characteristics
V+ = 10.8 V, IS = –10 mA
VD = 3 V, 8 V
Full
Room
40
Full
12
12
V
80
100
80
100
W
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
tON
RL = 300 W, CL = 35 pF
Room
175
Hot
tOFF
VS = 8 V, See Figure 2
Room
95
Hot
tD
DG413 Only, VS = 8 V,
RL = 300 W, CL = 35 pF
Room
25
Q
Vg = 6 V, Rg = 0 W, CL = 10 nF
Room
25
Power Supplies
250
250
400
315
125
140
125
140
ns
pC
Positive Supply Current
I+
Room
0.0001
1
Hot
5
Negative Supply Current
I–
Logic Supply Current
IL
V+ = 13.5, VIN = 0 or 5 V
Room –0.0001
–1
–1
Hot
–5
–5
Room
0.0001
1
Hot
5
Ground Current
IGND
Room –0.0001
–1
–1
Hot
–5
–5
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
1
5
mA
1
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. VD and Power Supply Voltage
50
45 TA = 25_C
"5 V
40
35
30
25
"15 V
20
"8 V
"10 V
"12 V
15
"20 V
10
5
0
–20 –15 –10 –5 0 5 10 15 20
VD – Drain Voltage (V)
On-Resistance vs. VD and Unipolar Supply Voltage
300
250
V+ = 3 V
VL = 3 V
200
VL = 5 V
150
V+ = 5 V
100
8V
50
12 V
15 V 20 V
0
0 2 4 6 8 10 12 14 16 18 20
VD – Drain Voltage (V)
www.vishay.com S FaxBack 408-970-5600
4-4
Document Number: 70050
S-52433—Rev. D, 06-Sep-99
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