DG407DN(2011) 데이터 시트보기 (PDF) - Vishay Semiconductors
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DG407DN Datasheet PDF : 16 Pages
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DG406, DG407
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
160
80
120
± 5V
80
±8V
± 10 V
± 12 V
40 ± 15 V
± 20 V
0
- 20
- 12
-4
4
12
20
VD - Drain Voltage (V)
RDS(on) vs. VD and Supply
70
60
125 °C
85 °C
50
40
25 °C
0 °C
30
- 40 °C
20
- 55 °C
10
0
- 15
- 10
-5
0
V+ = 15 V
V- = - 15 V
5
10
15
VD - Drain Voltage (V)
RDS(on) vs. VD and Temperature
240
V- = 0 V
V+ = 7.5 V
200
160
10 V
120
12 V
80
15 V
20 V
22 V
40
120
V+ = 15 V
V- = - 15 V
80
VS = - VD for ID(off)
VD = VS(open) for ID(on)
40
IS(off)
0
- 40
DG406 ID(on), ID(off)
- 80
DG407 ID(on), ID(off)
0
0
4
8
12
16
20
VD - Drain Voltage (V)
RDS(on) vs. VD and Supply
100 nA
10 nA
V+ = 15 V
V- = - 15 V
VD = "14 V
1 nA
100 pA
10 pA
ID(on), ID(off)
IS(off)
1 pA
0.1 pA
- 55 - 35 - 15 5
25 45
65 85 105 125
Temperature (°C)
ID , IS Leakages vs. Temperature
- 120
- 15 - 10
-5
0
5
10
15
VS , VD - Source Drain Voltage (V)
ID , IS Leakage Currents vs. Analog Voltage
350
300
250
tTRANS
200
tON(EN)
150
100
tOFF(EN)
50
0
±5
± 10
± 15
± 20
VSUPPLY - Supply Voltage (V)
Switching Times vs. Bipolar Supplies
www.vishay.com
6
Document Number: 70061
S11-0179-Rev. J, 07-Feb-11
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