DG271B(2004) 데이터 시트보기 (PDF) - Vishay Semiconductors
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DG271B Datasheet PDF : 5 Pages
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DG271B
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
V+ to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . (V−) −2 V to (V+) +2 V or
20 mA, whichever occurs first
Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature
(DY Suffix) . . . . . . . . . . . . . . . . . . . −65 to 150_C
(CJ Suffix) . . . . . . . . . . . . . . . . . . . −65 to 125_C
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
16-Pin Plastic Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V− will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 75_C
d. Derate 7.6 mW/_C above 75_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONSa
Parameter
Analog Switch
Symbol
Test Conditions
Unless Specified
V+ = 15 V, V− = −15 V
VIN = 2.4 V, 0.8 Vf
Tempb
C, D Suffix
0 to 70_C
−40 to 85_C
Mind Typc Maxd
Analog Signal Rangee
Drain-Source On-Resistance
Switch Off Leakage Current
Channel On Leakage Current
Digital Control
VANALOG
rDS(on)
IS(off)
ID(off)
ID(on) +
IS(on)
IS = 1 mA, VD = "10 V
VD = "14 V, VS = #14 V
VS = VD = "14 V
Full
−15
15
Room
Full
32
50
75
Room
−1
"0.05
1
Full
−20
20
Room
−1
"0.05
1
Full
−20
20
Room
−1
"0.05
1
Full
−20
20
Input Current with Voltage High
IINH
Input Current with Voltage Low
IINL
Dynamic Characteristics
VIN = 2 V
VIN = 15 V
VIN = 0 V
Full
−1
0.010
1
Full
−1
0.010
1
Full
−1
0.010
1
Turn-On Time
Turn-Off Time
Charge Injection
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
Off Isolation
Crosstalk
Supply
tON
tOFF
Q
CS(off)
CD(off)
CD(on)
OIRR
XTALK
VS = "10 V
See Figure 3
CL = 1 nF, VS = 0 V
Vgen = 0 V, Rgen = 0 W
See Figure 3
VS = 0 V, VIN = 5 V
f = 1 MHz
VD = VS = 0 V, VIN = 0 V
CL = 10 pF, RL = 1 kW
f = 100 kHz
See Figures 4 and 5
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
55
65
80
50
65
80
−5
8
8
30
85
100
Positive Supply Current
Negative Supply Current
I+
All Channels On or Off
Room
Full
5.5
7.5
9
I−
VIN = 5 V or 0 V
Room
−6
−3.4
Full
−8
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Unit
V
W
nA
mA
ns
pC
pF
dB
mA
www.vishay.com
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Document Number: 70966
S-42137—Rev. B, 15-Nov-04
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