GP1200ESM33 데이터 시트보기 (PDF) - Dynex Semiconductor
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GP1200ESM33 Datasheet PDF : 9 Pages
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GP1200ESM33
TYPICAL CHARACTERISTICS
2400
Common emitter
2200 Tcase = 25˚C
2000
Vge = 20/15/12/10V
1800
1600
1400
1200
1000
800
600
400
200
0
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, Vce - (V)
Fig.3 Typical output characteristics
2400
Common emitter
2200 Tcase = 125˚C
2000
Vge = 20/15/12/10V
1800
1600
1400
1200
1000
800
600
400
200
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, Vce - (V)
Fig.4 Typical output characteristics
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
1.0
Tj = 25˚C
Tj = 125˚C
1.5
2.0
2.5
3.0
3.5
Foward voltage, VF - (V)
Fig.5 Diode typical forward characteristics
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600 Tcase = 125˚C
Vge = ±15V
400 Rg(OFF) = 3.3Ω
200
CGE = 660nF
dVCE/dt < 9000V/µs
0
0
500 1000 1500
2000
2500
3000
Collector-emitter voltage, Vce - (V)
3500
Fig.6 Reverse bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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