GP800NSM33 데이터 시트보기 (PDF) - Dynex Semiconductor

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GP800NSM33

Hi-Reliability Single Switch IGBT Module

Dynex Semiconductor 

GP800NSM33

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise.

Symbol

Parameter

I

Collector cut-off current

CES

IGES

VGE(TH)

V

CE(sat)

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

IF

Diode forward current

IFM

Diode maximum forward current

VF

Diode forward voltage

Cies

Input capacitance

L

Module inductance

M

Test Conditions

VGE = 0V, VCE = VCES

VGE = 0V, VCE = VCES, Tcase = 125˚C

V

GE

=

±20V,

V

CE

=

0V

IC = 120mA, VGE = VCE

VGE = 15V, IC = 800A

VGE = 15V, IC = 800A, Tcase = 125˚C

DC, T = 125˚C, T = 70˚C

vj

case

tp = 1ms, Tcase = 110˚C

IF = 800A

IF = 800A, Tcase = 125˚C

VCE = 25V, VGE = 0V, f = 1MHz

-

Min. Typ. Max. Units

-

-

2

mA

-

-

70 mA

-

-

12 µA

4.5

5.5

6.5

V

-

3.4

4.3

V

-

4.3

5

V

-

-

800 A

-

-

1600 A

-

2.3

2.9

V

-

2.4

3

V

-

200

-

nF

-

15

-

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

3/9

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