CS8151D2G 데이터 시트보기 (PDF) - ON Semiconductor
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CS8151D2G
ON Semiconductor
CS8151D2G Datasheet PDF : 14 Pages
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CS8151
ELECTRICAL CHARACTERISTICS (−40°C ≤ TA ≤ 125°C, −40°C ≤ TJ ≤ 150°C, 6.0 V ≤ VIN ≤ 26 V, 100 mA ≤ IOUT ≤ 100 mA,
C2 = 47 mF (ESR < 8.0 W), CDelay = 0.1 mF; unless otherwise specified.)
Characteristic
Test Conditions
Min
Typ
Max
Unit
RESET
Current Limit
Delay Time
RESET = 0 V, VOUT > VRTH (Sourcing)
RESET = 5.0 V, VOUT > 1.0 V (Sinking)
POR Mode
0.025
0.5
0.1
12
3.0
5.0
1.30
mA
80
mA
7.0
ms
Watchdog Input
Threshold High
−
−
1.4
2.0
V
Threshold Low
−
0.8
1.3
−
V
Hysteresis
−
25
100
−
mV
Input Current
0 < WDI < 6.0 V
−10
0
+10
mA
Pulse Width
50% WDI Falling Edge to
50% WDI Rising Edge and
50% WDI Rising Edge to
50% WDI Falling Edge
(see Figures 2, 3, and 4)
5.0
−
−
ms
Wake Up Output
Wake Up Period
See Figure 2
30
40
50
ms
Wake Up Duty Cycle Nominal See Figure 4
40
50
60
%
RESET High to
Wake Up Rising Delay Time
50% RESET Rising Edge to
50% Wake Up Edge
(see Figures 2, 3, and 4)
15
20
25
ms
Wake Up Response to
Watchdog Input
50% WDI Falling Edge to
50% Wake Up Falling Edge
−
2.0
10
ms
Wake Up Response to
RESET
Output Low
Output High
Current Limit
50% RESET Falling Edge to
50% Wake Up Falling Edge,
VOUT = 5.0 V → 4.5 V
IOUT = 25 mA (Sinking)
IOUT = 25 mA (Sourcing)
Wake Up = 5.0 V
Wake Up = 0 V
−
2.0
−
0.2
3.8
4.2
0.025
1.0
0.05
−
10
ms
0.8
V
5.1
V
7.0
mA
3.5
mA
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