ISL9K3060G3 데이터 시트보기 (PDF) - Fairchild Semiconductor
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ISL9K3060G3 Datasheet PDF : 6 Pages
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Package Marking and Ordering Information
Device Marking
K3060G3
Device
ISL9K3060G3
Package
TO-247
Tape Width
-
Quantity
-
Electrical Characteristics (per leg) TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
IR
Instantaneous Reverse Current
VR = 600V
TC = 25°C
TC = 125°C
-
- 100 µA
-
- 1.0 mA
On State Characteristics
VF Instantaneous Forward Voltage
IF = 30A
TC = 25°C
TC = 125°C
- 2.1 2.4 V
- 1.7 2.1 V
Dynamic Characteristics
CJ Junction Capacitance
VR = 10V, IF = 0A
- 120 -
pF
Switching Characteristics
trr
Reverse Recovery Time
trr
IRM(REC)
QRR
trr
S
IRM(REC)
QRR
trr
S
IRM(REC)
QRR
dIM/dt
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Maximum di/dt during tb
IF = 1A, dIF/dt = 100A/µs, VR = 30V
-
IF = 30A, dIF/dt = 100A/µs, VR = 30V -
IF = 30A,
-
dIF/dt = 200A/µs,
-
VR = 390V, TC = 25°C
-
IF = 30A,
-
dIF/dt = 200A/µs,
-
VR = 390V,
-
TC = 125°C
-
IF = 30A,
-
dIF/dt = 1000A/µs,
-
VR = 390V,
-
TC = 125°C
-
27 35 ns
36 45 ns
36
-
ns
2.9 -
A
55
-
nC
110 -
ns
1.9 -
6
-
A
450
-
nC
60
-
ns
1.25 -
21
-
A
730
-
nC
800 - A/µs
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-247
-
- 1.0 °C/W
-
-
30 °C/W
1560©2002 Fairchild Semiconductor Corporation
ISL9K3060G3 Rev. C
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