BZX84B9V1LT1G,T3G 데이터 시트보기 (PDF) - ON Semiconductor
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BZX84B9V1LT1G,T3G Datasheet PDF : 7 Pages
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BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Total Power Dissipation on FR−5 Board,
(Note 1) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
250
mW
2.0
mW/°C
500
°C/W
Total Power Dissipation on Alumina
Substrate, (Note 2) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
300
mW
2.4
mW/°C
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−65 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Symbol
Parameter
VZ
IZT
ZZT
IR
VR
IF
VF
QVZ
C
Reverse Zener Voltage @ IZT
Reverse Current
Maximum Zener Impedance @ IZT
Reverse Leakage Current @ VR
Reverse Voltage
Forward Current
Forward Voltage @ IF
Maximum Temperature Coefficient of VZ
Max. Capacitance @ VR = 0 and f = 1 MHz
I
IF
VZ VR
IIRZT VF
V
Zener Voltage Regulator
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