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CMPD7000E

ENHANCED SPECIFICATION SURFACE MOUNT DUAL, IN SERIES SILICON SWITCHING DIODES

Central Semiconductor 

CMPD7000E

ENHANCED SPECIFICATION

SURFACE MOUNT

DUAL, IN SERIES

SILICON SWITCHING DIODES

SOT-23 CASE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPD7000E is

an Enhanced version of the CMPD7000 Dual, Series

Configuration, Ultra-High Speed Switching Diode. This

device is manufactured by the epitaxial planar process,

in an epoxy molded surface mount SOT-23 package,

designed for high speed switching applications.

MARKING CODE: C5CE

FEATURED ENHANCED SPECIFICATIONS:

♦ BVR from 100V min to 120V min.

♦ VF from 1.1V max to 1.0V max.

MAXIMUM RATINGS: (TA=25 °C)

♦ Peak Repetitive Reverse Voltage

Average Forward Current

Peak Forward Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VRRM

IO

IFM

PD

TJ, Tstg

ΘJA

120

200

500

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS

MIN

TYP

MAX

IR

VR=50V

300

IR

VR=50V, TA=125°C

100

IR

♦ BVR

♦ VF

♦ VF

♦ VF

VR=100V

IR=100µA

IF=1.0mA

IF=10mA

IF=100mA

500

120

150

0.55

0.59

0.65

0.67

0.72

0.77

0.85

0.91

1.0

CT

VR=0, f=1.0MHz

1.5

2.6

trr

IR=IF=10mA, RL=100Ω, Rec. to 1.0mA

2.0

4.0

♦ Enhanced Specification

UNITS

V

mA

mA

mW

°C

°C/W

UNITS

nA

μA

nA

V

V

V

V

pF

ns

R4 (27-January 2010)

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