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CM600DY-24A

Dual IGBTMOD™ A-Series Module 600 Amperes/1200 Volts

Powerex 

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272

CM600DY-24A

Dual IGBTMOD™ A-Series Module

600 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Ratings

Junction Temperature

Storage Temperature

Collector-Emitter Voltage (G-E Short)

Gate-Emitter Voltage (C-E Short)

Collector Current (DC, TC = 80°C*)

Peak Collector Current

Emitter Current*** (TC = 25°C)

Peak Emitter Current***

Maximum Collector Dissipation (TC = 25°C*, Tj ≤ 150°C)

Mounting Torque, M6 MainTerminal

Mounting Torque, M6 Mounting

Weight

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)

Symbol

Tj

Tstg

VCES

VGES

IC

ICM

IE

IEM

PC

—

—

—

VISO

CM600DY-24A

–40 to 150

–40 to 125

1200

±20

600

1200**

600

1200**

3670

40

40

580

2500

Units

°C

°C

Volts

Volts

Amperes

Amperes

Amperes

Amperes

Watts

in-lb

in-lb

Grams

Volts

Static Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics

Symbol

Test Conditions

Collector-Cutoff Current

Gate Leakage Current

Gate-Emitter Threshold Voltage

Collector-Emitter Saturation Voltage

Total Gate Charge

Emitter-Collector Voltage**

ICES

IGES

VGE(th)

VCE(sat)

QG

VEC

VCE = VCES, VGE = 0V

VGE = VGES, VCE = 0V

IC = 60mA, VCE = 10V

IC = 600A, VGE = 15V, Tj = 25°C

IC = 600A, VGE = 15V, Tj = 125°C

VCC = 600V, IC = 600A, VGE = 15V

IE = 600A, VGE = 0V

Min.

Typ.

Max. Units

—

—

1.0

mA

—

—

0.5

µA

6.0

7.0

8.0

Volts

—

2.1

3.0

Volts

—

2.4

—

Volts

—

2700

—

nC

—

—

3.8

Volts

Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max. Units

Input Capacitance

Cies

—

Output Capacitance

Coes

VCE = 10V, VGE = 0V

—

Reverse Transfer Capacitance

Cres

—

Inductive

Turn-on Delay Time

td(on)

—

Load

Rise Time

tr

VCC = 600V, IC = 600A,

—

Switch

Turn-off Delay Time

td(off)

VGE1 = VGE2 = 15V, RG = 0.52Ω,

—

Time

Fall Time

tf

Inductive Load

—

Diode Reverse Recovery Time**

trr

Switching Operation,

—

Diode Reverse Recovery Charge**

Qrr

IE = 600A

—

*TC, Tf measured point is just under the chips.

**Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.

***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

—

94

nf

—

8.0 nf

—

1.8 nf

—

660

ns

—

190

ns

—

700

ns

—

350

ns

—

250

ns

19

—

µC

2

Rev. 11/07

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