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CM400DY-12NF 데이터 시트보기 (PDF) - Powerex

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CM400DY-12NF Datasheet PDF : 4 Pages
1 2 3 4
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400DY-12NF
Dual IGBTMOD™ NF-Series Module
400 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current*** (DC, TC' = 92°C)
Peak Collector Current
Emitter Current** (TC = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (TC = 25°C, Tj 150°C)
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
.
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
PC
VISO
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
ICES
IGES
VGE(th)
VCE(sat)
QG
VEC
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 40mA, VCE = 10V
IC = 400A, VGE = 15V, Tj = 25°C
IC = 400A, VGE = 15V, Tj = 125°C
VCC = 300V, IC = 400A, VGE = 15V
IE = 400A, VGE = 0V
CM400DY-12NF
–40 to 150
–40 to 125
600
±20
400
800*
400
800*
1130
40
40
400
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Min.
Typ.
Max. Units
1.0
mA
0.5
µA
5.0
6.0
7.5
Volts
1.7
2.2
Volts
1.7
Volts
1600
nC
2.6
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Input Capacitance
Cies
Output Capacitance
Coes
VCE = 10V, VGE = 0V
Reverse Transfer Capacitance
Cres
Inductive
Turn-on Delay Time
td(on)
Load
Rise Time
tr
VCC = 300V, IC = 400A,
Switch
Turn-off Delay Time
td(off)
VGE1 = VGE2 = 15V, RG = 3.1Ω,
Time
Fall Time
tf
Inductive Load
Diode Reverse Recovery Time**
trr
Switching Operation,
Diode Reverse Recovery Charge**
Qrr
IE = 400A
*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi)
***Tc' measured point is just under the chips. If this vaule is used, Rth(f-a) should be measured just under the chips .
60
nf
7.3 nf
2.4 nf
300
ns
200
ns
450
ns
300
ns
250
ns
6.8
µC
2

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