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CM300DU-24NFH

MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI ELECTRIC  

MITSUBISHI IGBT MODULES

CM300DU-24NFH

HIGH POWER SWITCHING USE

MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)

Symbol

VCES

VGES

IC

ICM

IE (Note 1)

IEM (Note 1)

PC (Note 3)

PC’ (Note 3)

Tj

Tstg

Viso

—

—

—

Parameter

Collector-emitter voltage

Gate-emitter voltage

Collector current

Emitter current

Maximum collector dissipation

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Mounting torque

Weight

G-E Short

C-E Short

Operation

Pulse

Operation

Pulse

TC = 25°C

TC’ = 25°C*4

Conditions

(Note 2)

(Note 2)

(Note 2)

(Note 2)

Terminals to base plate, f = 60Hz, AC 1 minute

Main terminals M6 screw

Mounting M6 screw

Typical value

Ratings

1200

±20

300

600

300

600

1130

1900

–40 ~ +150

–40 ~ +125

2500

3.5 ~ 4.5

3.5 ~ 4.5

400

Unit

V

V

A

A

A

A

W

W

°C

°C

Vrms

N•m

N•m

g

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol

Parameter

ICES

Collector cutoff current

Test conditions

VCE = VCES, VGE = 0V

Limits

Min.

Typ.

Max. Unit

—

—

1

mA

VGE(th) Gate-emitter threshold voltage IC = 30mA, VCE = 10V

4.5

6

IGES

Gate leakage current

±VGE = VGES, VCE = 0V

—

—

VCE(sat)

Cies

Coes

Cres

Collector-emitter saturation voltage IC = 300A, VGE = 15V

Input capacitance

Output capacitance

Reverse transfer capacitance

VCE = 10V

VGE = 0V

Tj = 25°C

Tj = 125°C

—

5.0

—

5.0

—

—

—

—

—

—

QG

Total gate charge

VCC = 600V, IC = 300A, VGE = 15V

—

td(on)

Turn-on delay time

—

tr

Turn-on rise time

VCC = 600V, IC = 300A

—

td(off)

Turn-off delay time

VGE = ±15V

—

tf

Turn-off fall time

RG = 1Ω, Inductive load

—

trr (Note 1) Reverse recovery time

IE = 300A

—

Qrr (Note 1) Reverse recovery charge

—

VEC(Note 1) Emitter-collector voltage

IE = 300A, VGE = 0V

—

Rth(j-c)Q Thermal resistance*1

IGBT part (1/2 module)

—

Rth(j-c)R

FWDi part (1/2 module)

—

Rth(c-f)

Contact thermal resistance

Case to heat sink, Thermal compound Applied*2 (1/2 module)

—

Rth(j-c’)Q Thermal resistance*4

IGBT part (1/2 module)

—

Rth(j-c’)R

FWDi part (1/2 module)

—

RG

External gate resistance

1

1360

—

—

—

—

—

13

—

—

—

0.04

—

—

—

*1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING.

*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].

*3 : If you use this value, Rth(f-a) should be measured just under the chips.

*4 : Case temperature (TC’) measured point is just under the chips.

Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.

3. Junction temperature (Tj) should not increase beyond 150°C.

4. No short circuit capability is designed.

7.5

V

1

µA

6.5

—

V

47

nF

4

nF

0.9

nF

—

nC

300

ns

80

ns

500

ns

150

ns

250

ns

—

µC

3.5

V

0.11 K/W

0.18 K/W

—

K/W

0.066*3 K/W

0.1*3 K/W

10

Ω

Feb. 2009

2

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