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CM150RX-24S

Six IGBT + Brake NX-Series Module 150 Amperes/1200 Volts

Powerex 

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

CM150RX-24S

Six IGBT + Brake NX-Series Module

150 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specified

Inverter Part IGBT/FWDi

Characteristics

Symbol

Test Conditions

Min.

Typ. Max.

Collector-Emitter Cutoff Current

ICES

VCE = VCES, VGE = 0V

—

—

1.0

Gate-Emitter Leakage Current

IGES

VGE = VGES, VCE = 0V

—

—

0.5

Gate-Emitter Threshold Voltage

VGE(th)

IC = 15mA, VCE = 10V

5.4

6.0

6.6

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 150A, VGE = 15V, Tj = 25°C*5

—

1.80

2.25

(Terminal)

IC = 150A, VGE = 15V, Tj = 125°C*5

—

2.00

—

IC = 150A, VGE = 15V, Tj = 150°C*5

—

2.05

—

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 150A, VGE = 15V, Tj = 25°C*5

—

1.70

2.15

(Chip)

IC = 150A, VGE = 15V, Tj = 125°C*5

—

1.90

—

IC = 150A, VGE = 15V, Tj = 150°C*5

—

1.95

—

Input Capacitance

Cies

—

—

15

Output Capacitance

Coes

VCE = 10V, VGE = 0V

—

—

3.0

Reverse Transfer Capacitance

Cres

—

—

0.25

Gate Charge

QG

VCC = 600V, IC = 150A, VGE = 15V

—

350

—

Turn-on Delay Time

td(on)

—

—

800

Rise Time

tr

VCC = 600V, IC = 150A, VGE = ±15V,

—

—

200

Turn-off Delay Time

td(off)

RG = 0Ω, Inductive Load

—

—

600

Fall Time

tf

—

—

300

Emitter-Collector Voltage

VEC*1

IE = 150A, VGE = 0V, Tj = 25°C*5

—

1.80

2.25

(Terminal)

IE = 150A, VGE = 0V, Tj = 125°C*5

—

1.80

—

IE = 150A, VGE = 0V, Tj = 150°C*5

—

1.80

—

Emitter-Collector Voltage

VEC*1

IE = 150A, VGE = 0V, Tj = 25°C*5

—

1.70

2.15

(Chip)

IE = 150A, VGE = 0V, Tj = 125°C*5

—

1.70

—

IE = 150A, VGE = 0V, Tj = 150°C*5

—

1.70

—

Reverse Recovery Time

trr*1

VCC = 600V, IE = 150A, VGE = ±15V

—

—

300

Reverse Recovery Charge

Qrr*1

RG = 0Ω, Inductive Load

—

8.0

—

Turn-on Switching Energy per Pulse

Eon

VCC = 600V, IC = IE = 150A,

—

24.2

—

Turn-off Switching Energy per Pulse

Eoff

VGE = ±15V, RG = 0Ω,

—

16

—

Reverse Recovery Energy per Pulse

Err*1

Tj = 150°C, Inductive Load

—

12.2

—

Internal Lead Resistance

RCC' + EE'

Main Terminals-Chip,

—

—

1.8

Per Switch,TC = 25°C*4

Internal Gate Resistance

rg

Per Switch

—

13

—

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling

diode (FWDi).

*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface

(mounting side) of the baseplate and the heatsink side just under the chips.

Refer to the figure to the right for chip location.

The heatsink thermal resistance should be measured just under the chips.

*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

LABEL SIDE

0

15.3

17.6

26.0 22.6

28.4

34.4

34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13

Tr

35 UP

Di

UP

36

Tr

VP

Tr

UN Di

VP

Di

UN

1

2

Tr

WP

Tr

VN

Di

WP

Di

VN

3

Tr

12

WN Th 11

10

Di Di 9

WN Br 8

Tr

7

Br 6

5

4

0

21.5

22.7

32.3

42.8

Units

mA

µA

Volts

Volts

Volts

Volts

Volts

Volts

Volts

nF

nF

nF

nC

ns

ns

ns

ns

Volts

Volts

Volts

Volts

Volts

Volts

ns

µC

mJ

mJ

mJ

mΩ

Ω

03/13 Rev. 5

Each mark points to the center position of each chip.

Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi

DiBr: Clamp

Th: NTC Thermistor

3

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