DG858BW45(2000) 데이터 시트보기 (PDF) - Dynex Semiconductor

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DG858BW45
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

DG858BW45

14000

Conditions:

A

12000

Tj = 125˚C

Cs = 3.0µF

dIGQ/dt = 40A/µs

B

10000

8000

C

6000

4000

2000

0

0

A: VDM = 100% VDRM

B: VDM = 75% VDRM

C: VDM = 50% VDRM

500

1000

1500

2000

2500

On-state current IT - (A)

Figure 18. Turn-off energy vs on-state current

3000

14000

13000

VDM = 100% VDRM

12000

11000

10000

9000

8000

7000

VDM = 75% VDRM

Conditions:

IT = 3000A

Tj = 125˚C

Cs = 3.0µF

VDM = 50% VDRM

6000

20 25 30 35 40 45 50 55 60

Rate of rise of reverse gate current dIGQ/dt- (A/µs)

Figure 19. Turn-off energy loss vs rate of rise of reverse gate current

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