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CM1204(2010) 데이터 시트보기 (PDF) - ON Semiconductor

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CM1204
(Rev.:2010)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
CM1204 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
CM1204
Specifications
PARAMETER
Storage Temperature Range
DC Package Power Rating
ABSOLUTE MAXIMUM RATINGS
RATING
-65 to +150
200
UNITS
°C
mW
STANDARD OPERATING CONDITIONS
PARAMETER
Operating Temperature Range
RATING
-40 to +85
UNITS
°C
ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)
SYMBOL PARAMETER
VDIODE Diode Reverse Breakdown Voltage
CONDITIONS
IDIODE = 10µA
MIN TYP
6.0
ILEAK Diode Leakage Current
VIN=3.3V, TA=25°C
VSIG Signal Voltage
Positive Clamp
Negative Clamp
IDIODE = 10mA
5.6 6.8
-1.5 -0.8
VESD In-system ESD Withstand Voltage
Note 2
a) Human Body Model, MIL-STD-883,
±30
Method 3015
b) Contact Discharge per IEC 61000-4-2
±15
VCL Clamping Voltage during ESD Discharge Note 2
MIL-STD-883 (Method 3015), 8kV
Positive Transients
+15
Negative Transients
-8
CDIODE Diode Capacitance
At 2.5VDC Reverse Bias, 22 27
1MHz, 30mVAC
MAX
100
9.0
-0.4
32
UNITS
V
nA
V
V
kV
kV
V
V
pF
Note 1: TA=-40 to +85°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Rev. 3 | Page 3 of 9 | www.onsemi.com

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