CM100DY-24A(2004) 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC

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CM100DY-24A
(Rev.:2004)

HIGH POWER SWITCHING USE

MITSUBISHI ELECTRIC  

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)

Symbol

VCES

VGES

IC

ICM

IE (Note 1)

IEM (Note 1)

PC (Note 3)

Tj

Tstg

Viso

—

—

—

Parameter

Collector-emitter voltage

Gate-emitter voltage

Collector current

Emitter current

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Torque strength

Weight

G-E Short

C-E Short

DC, TC = 84°C*1

Pulse

Pulse

TC = 25°C*1

Conditions

Main terminal to base plate, AC 1 min.

Main terminal M5

Mounting holes M6

Typical value

MITSUBISHI IGBT MODULES

CM100DY-24A

HIGH POWER SWITCHING USE

(Note 2)

(Note 2)

Ratings

1200

±20

100

200

100

200

672

–40 ~ +150

–40 ~ +125

2500

2.5 ~ 3.5

3.5 ~ 4.5

310

Unit

V

V

A

A

W

°C

°C

V

N•m

g

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

Parameter

Test conditions

Min.

ICES

Collector cutoff current

VCE = VCES, VGE = 0V

—

Gate-emitter threshold

VGE(th)

voltage

IC = 10mA, VCE = 10V

6

IGES

Gate leakage current

VGE = VGES, VCE = 0V

—

Collector-emitter saturation Tj = 25°C

—

VCE(sat) voltage

Tj = 125°C

IC = 100A, VGE = 15V

—

Cies

Input capacitance

—

Coes

Output capacitance

VCE = 10V

—

Cres

Reverse transfer capacitance VGE = 0V

—

QG

Total gate charge

VCC = 600V, IC = 100A, VGE = 15V

—

td(on)

Turn-on delay time

—

tr

Turn-on rise time

VCC = 600V, IC = 100A

—

td(off)

Turn-off delay time

VGE1 = VGE2 = 15V

—

tf

Turn-off fall time

RG = 3.1Ω, Inductive load switching operation

—

trr (Note 1) Reverse recovery time

IE = 100A

—

Qrr (Note 1) Reverse recovery charge

—

VEC(Note 1) Emitter-collector voltage

IE = 100A, VGE = 0V

—

Rth(j-c)Q

Rth(j-c)R

Thermal resistance

IGBT part (1/2 module)*1

FWDi part (1/2 module)*1

—

—

Rth(c-f)

Contact thermal resistance

Case to fin, Thermal compound Applied (1/2 module)*1,*2

—

RG

External gate resistance

3.1

*1 : Tc, Tf measured point is just under the chips.

*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

3. Junction temperature (Tj) should not increase beyond 150°C.

Limits

Typ.

—

7

—

2.1

2.4

—

—

—

500

—

—

—

—

—

5.0

—

—

—

0.022

—

Max. Unit

1

mA

8

0.5

3.0

—

17.5

1.5

0.34

—

100

70

400

350

150

—

3.8

0.186

0.34

—

42

V

µA

V

nF

nC

ns

ns

µC

V

°C/W

Ω

Jul. 2004

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