CEPF634(2002) 데이터 시트보기 (PDF) - Chino-Excel Technology
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CEPF634 Datasheet PDF : 5 Pages
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CEPF634/CEBF634
Nov. 2002
N-Channel Enhancement Mode Field Effect Transistor
4
FEATURES
250V , 8.1A , RDS(ON)=450mΩ @VGS=10V.
D
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
G
D
G
G
S
CEB SERIES
D
S
CEP SERIES
S
TO-263(DD-PAK)
TO-220
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
-Pulsed
IDM
Drain-Source Diode Forward Current
IS
Maximum Power Dissipation @Tc=25 C
Derate above 25 C
Operating and Storage Temperature Range
PD
TJ, TSTG
Limit
250
Ć30
8.1
32
8.1
74
0.59
-55 to 150
Unit
V
V
A
A
A
W
W/ C
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
RįJC
1.7
C/W
Thermal Resistance, Junction-to-Ambient
RįJA
62
C/W
4-27
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