CD4049BMS(1997) 데이터 시트보기 (PDF) - Intersil

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CD4049BMS
(Rev.:1997)

CMOS Hex Buffer/Converter

Intersil 

CD4049UBMS

Typical Performance Characteristics (Continued)

105 AMBIENT TEMPERATURE (TA)

86 = +25oC

4

2

104

86

4

SUPPLY VOLTAGE

(VDD) = 15V

103 2

86

4

2

102

8

6

4

10V

10V

5V

LOAD CAPACITANCE (CL) = 50pF

(11pF FIXTURE + 39pF EXT)

2

CL = 15pF (11pF FIXTURE + 4pF EXT

10

2 4 6 8 2 4 68 2 4 68 2 4 68

10

102

103

104

105

INPUT FREQUENCY (f) (kHz)

FIGURE 8. TYPICAL POWER DISSIPATION vs FREQUENCY

CHARACTERISTICS

106 AMBIENT TEMPERATURE (TA) = +25oC

105

15V; 1MHz

104

15V; 100KHz

103

10V; 100KHz

15V; 10KHz

102

10V; 10KHz

10

15V; 1KHz

SUPPLY VOLTAGE (VCC) = 5V

FREQUENCY (f) = 10KHz

1

10 102 103 104 105 106 107 108

INPUT RISE AND FALL TIME (tr, tf) (ns)

FIGURE 9. TYPICAL POWER DISSIPATION vs INPUT RISE

AND FALL TIMES PER INVERTER

Chip Dimensions and Pad Layout

Dimensions in parenthesis are in millimeters and are derived

from the basic inch dimensions as indicated. Grid

graduations are in mils (10-3 inch).

METALLIZATION: Thickness: 11kÅ − 14kÅ, AL.

PASSIVATION: 10.4kÅ - 15.6kÅ, Silane

BOND PADS: 0.004 inches X 0.004 inches MIN

DIE THICKNESS: 0.0198 inches - 0.0218 inches

7

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