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CA3141E

High-Voltage Diode Array For Commercial, Industrial and Military Applications

Intersil 

CA3141 January

Semiconductor

1999

NO

Call

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Commercial,

Applications

Features

Description

• Matched Monolithic Construction

- VF Match (Each Diode Pair) . . . . 0.55mV At IF = 1mA

• Low Diode Capacitance. . . . . . . 0.3pF (Typ) at VR = 2V

• High Diode-to-Substrate Breakdown. . . . . . . . . 30V (Min)

• Low Reverse (Leakage) Current . . . . . . . 100nA (Max)

Applications

The CA3141E High Voltage Diode Array Consists of ten gen-

eral purpose high reverse breakdown diodes. Six diodes are

internally connected to form three common cathode diode

pairs, and the remaining four diodes are internally connected

to form two common anode diode pairs. Integrated circuit

construction assures excellent static and dynamic matching

of the diodes, making the CA3141 extremely useful for a

wide variety of applications in communications and switching

systems.

• Balanced Modulators or Demodulators

• Analog Switches

• High-Voltage Diode Gates

• Current Ratio Detectors

Part Number Information

TEMP.

PART NUMBER RANGE (oC)

PACKAGE

CA3141E

-55 to 125 16 Ld PDIP

PKG.

NO.

E16.3

Pinout

CA3141

(PDIP)

TOP VIEW

1

D1 D10 16

2

15

D2 D9

3

14

4

D3 D7

13

5

12

D4 D8

6

11

7

D5 D6 10

8

9

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.

Copyright © Harris Corporation 1999

1

File Number 906.4

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