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CA3127M Datasheet PDF : 7 Pages
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CA3127
Absolute Maximum Ratings
Thermal Information
The following ratings apply for each transistor in the device
Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . 15V
Collector-to-Base Voltage, VCBO. . . . . . . . . . . . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage, VCIO (Note 1). . . . . . . . . . . . . 20V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Thermal Resistance (Typical, Note 2)
θJA (oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
175
Maximum Power Dissipation, PD (Any One Transistor). . . . . . 85mW
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . 175oC
Maximum Junction Temperature (Plastic Packages). . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3127 is isolated from the substrate by an integral diode. The substrate (Terminal 5) must be con-
nected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications TA = 25oC
PARAMETER
TEST CONDITIONS
MIN
TYP MAX UNITS
DC CHARACTERISTICS (For Each Transistor)
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Substrate Breakdown-Voltage
Emitter-to-Base Breakdown Voltage (Note 3)
Collector-Cutoff-Current
Collector-Cutoff-Current
DC Forward-Current Transfer Ratio
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Magnitude of Difference in VBE
Magnitude of Difference in IB
DYNAMIC CHARACTERISTICS
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IC1 = 10µA, IB = 0, IE = 0
IE = 10µA, IC = 0
VCE = 10V IB = 0
VCB = 10V, IE = 0
VCE = 6V
IC = 5mA
IC = 1mA
IC = 0.1mA
VCE = 6V
IC = 5mA
IC = 1mA
IC = 0.1mA
IC = 10mA, IB = 1mA
Q1 and Q2 Matched
VCE = 6V, IC = 1mA
20
32
-
V
15
24
-
V
20
60
-
V
4
5.7
-
V
-
-
0.5
µA
-
-
40
nA
35
88
-
40
90
-
35
85
-
0.71 0.81 0.91
V
0.66 0.76 0.86
V
0.60 0.70 0.80
V
-
0.26 0.50
V
-
0.5
5
mV
-
0.2
3
µA
Noise Figure
Gain-Bandwidth Product
Collector-to-Base Capacitance
Collector-to-Substrate Capacitance
Emitter-to-Base Capacitance
Voltage Gain
Power Gain
Noise Figure
f = 100kHz, RS = 500Ω, IC = 1mA
-
2.2
-
VCE = 6V, IC = 5mA
-
1.15
-
VCB = 6V, f = 1MHz
VCI = 6V, f = 1MHz
-
See
-
-
Fig. 5
-
VBE = 4V, f = 1MHz
-
-
VCE = 6V, f = 10MHz, RL = 1kΩ, IC = 1mA
-
28
-
Cascode Configuration
f = 100MHz, V+ = 12V, IC = 1mA
27
30
-
-
3.5
-
dB
GHz
pF
pF
pF
dB
dB
dB
Input Resistance
Output Resistance
Common-Emitter Configuration
VCE = 6V, IC = 1mA, f = 200 MHz
-
400
-
Ω
-
4.6
-
kΩ
Input Capacitance
-
3.7
-
pF
Output Capacitance
-
2
-
pF
Magnitude of Forward Transadmittance
-
24
-
mS
NOTE:
3. When used as a zener for reference voltage, the device must not be subjected to more than 0.1mJ of energy from any possible capacitance
or electrostatic discharge in order to prevent degradation of the junction. Maximum operating zener current should be less than 10mA.
5-2
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