BZX84C2V4LT 데이터 시트보기 (PDF) - ON Semiconductor
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BZX84C2V4LT Datasheet PDF : 7 Pages
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BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Device*
BZX84C2V4LT1, G
Device
Marking
Z11
VZ1 (Volts)
@ IZT1 = 5 mA
(Note 3)
Min Nom Max
2.2
2.4
2.6
ZZT1
(W)
@ IZT1 =
5 mA
100
VZ2 (V)
@ IZT2 = 1 mA
(Note 3)
Min Max
1.7
2.1
ZZT2
(W)
@ IZT2 =
1 mA
VZ3 (V)
@ IZT3 = 20 mA
(Note 3)
Min Max
ZZT3
(W)
@ IZT3 =
20 mA
600
2.6
3.2
50
Max Reverse
Leakage
Current
IR
mA
@
VR
Volts
qVZ
(mV/k)
@ IZT1 = 5 mA
Min Max
C (pF)
@ VR = 0
f = 1 MHz
50
1
−3.5
0
450
BZX84C2V7LT1, G
Z12
2.5
2.7
2.9
100
1.9
2.4
600
3
3.6
50
20
1
−3.5
0
450
BZX84C3V0LT1, G
Z13
2.8
3
3.2
95
2.1
2.7
600
3.3
3.9
50
10
1
−3.5
0
450
BZX84C3V3LT1, G
Z14
3.1
3.3
3.5
95
2.3
2.9
600
3.6
4.2
40
5
1
−3.5
0
450
BZX84C3V6LT1, G
Z15
3.4
3.6
3.8
90
2.7
3.3
600
3.9
4.5
40
BZX84C3V9LT1, G
Z16
3.7
3.9
4.1
90
2.9
3.5
600
4.1
4.7
30
BZX84C4V3LT1, G
W9
4
4.3
4.6
90
3.3
4
600
4.4
5.1
30
5
1
−3.5
0
450
3
1
−3.5 −2.5
450
3
1
−3.5
0
450
BZX84C4V7LT1, G
Z1
4.4 4.7
5
80
3.7
4.7
500
4.5
5.4
15
3
2
−3.5 0.2
260
BZX84C5V1LT1, G
Z2
4.8
5.1
5.4
60
4.2
5.3
480
5
5.9
15
BZX84C5V6LT1, G
Z3
5.2 5.6
6
40
4.8
6
400
5.2
6.3
10
2
2
−2.7 1.2
225
1
2
−2.0 2.5
200
BZX84C6V2LT1, G
Z4
5.8
6.2
6.6
10
5.6
6.6
150
5.8
6.8
6
3
4
0.4
3.7
185
BZX84C6V8LT1, G
Z5
6.4
6.8
7.2
15
6.3
7.2
80
6.4
7.4
6
2
4
1.2
4.5
155
BZX84C7V5LT1, G
Z6
7
7.5
7.9
15
6.9
7.9
80
7
8
6
1
5
2.5
5.3
140
BZX84C8V2LT1, G
Z7
7.7
8.2
8.7
15
7.6
8.7
80
7.7
8.8
6
0.7
5
3.2
6.2
135
BZX84C9V1LT1, G
Z8
8.5
9.1
9.6
15
8.4
9.6
100
8.5
9.7
8
0.5
6
3.8
7.0
130
BZX84C10LT1, G
Z9
9.4
10 10.6
20
9.3 10.6
150
9.4 10.7
10
0.2
7
4.5
8.0
130
BZX84C11LT1, G
Y1
10.4 11 11.6
20
10.2 11.6
150
10.4 11.8
10
0.1
8
5.4
9.0
130
BZX84C12LT1, G
Y2
11.4 12 12.7
25
11.2 12.7
150
11.4 12.9
10
0.1
8
6.0 10.0
130
BZX84C13LT1, G
Y3
12.4 13 14.1
30
12.3
14
170
12.5 14.2
15
0.1
8
7.0 11.0
120
BZX84C15LT1, G
Y4
13.8 15 15.6
30
13.7 15.5
200
13.9 15.7
20
0.05 10.5 9.2 13.0
110
BZX84C16LT1, G
Y5
15.3 16 17.1
40
15.2
17
200
15.4 17.2
20
0.05 11.2 10.4 14.0
105
BZX84C18LT1, G
BZX84C20LT1, G
Y6
16.8 18 19.1
45
16.7
19
225
16.9 19.2
20
0.05 12.6 12.4 16.0
100
Y7
18.8 20 21.2
55
18.7 21.1
225
18.9 21.4
20
0.05 14 14.4 18.0
85
BZX84C22LT1, G
BZX84C24LT1, G
Device
BZX84C27LT1, G
Y8
Y9
Device
Marking
Y10
20.8 22 23.3
22.8 24 25.6
VZ1 Below
@ IZT1 = 2 mA
Min Nom Max
25.1 27 28.9
55
20.7 23.2
250
20.9 23.4
25
70
22.7 25.5
250
22.9 25.7
25
ZZT1
Below
@ IZT1 =
2 mA
VZ2 Below
@ IZT2 = 0.1 m-
A
Min Max
ZZT2
Below
@ IZT4 =
0.5 mA
VZ3 Below
@ IZT3 = 10 mA
Min Max
ZZT3
Below
@ IZT3 =
10 mA
80
25
28.9
300
25.2 29.3
45
0.05 15.4 16.4 20.0
85
0.05 16.8 18.4 22.0
80
Max Reverse
Leakage
Current
IR
mA
@
VR
(V)
qVZ
(mV/k) Below
@ IZT1 = 2 mA
Min Max
C (pF)
@ VR = 0
f = 1 MHz
0.05 18.9 21.4 25.3
70
BZX84C30LT1, G
BZX84C33LT1, G
BZX84C36LT1, G
BZX84C39LT1, G
BZX84C43LT1, G
Y11
28
30
32
80
27.8
32
300
28.1 32.4
50
0.05 21 24.4 29.4
70
Y12
31
33
35
80
30.8
35
325
31.1 35.4
55
0.05 23.1 27.4 33.4
70
Y13
34
36
38
90
33.8
38
350
34.1 38.4
60
0.05 25.2 30.4 37.4
70
Y14
37
39
41
130
36.7
41
350
37.1 41.5
70
0.05 27.3 33.4 41.2
45
Y15
40
43
46
150
39.7
46
375
40.1 46.5
80
0.05 30.1 37.6 46.6
40
BZX84C47LT1, G
Y16
44
47
50
170
43.7
50
375
44.1 50.5
90
0.05 32.9 42.0 51.8
40
BZX84C51LT1, G
Y17
48
51
54
180
47.6
54
400
48.1 54.6
100
0.05 35.7 46.6 57.2
40
BZX84C56LT1, G
Y18
52
56
60
200
51.5
60
425
52.1 60.8
110
0.05 39.2 52.2 63.8
40
BZX84C62LT1, G
Y19
58
62
66
215
57.4
66
450
58.2 67
120
0.05 43.4 58.8 71.6
35
BZX84C68LT1, G
Y20
64
68
72
240
63.4
72
475
64.2 73.2
130
0.05 47.6 65.6 79.8
35
BZX84C75LT1, G
Y21
70
75
79
255
69.4
79
500
70.3 80.2
140
0.05 52.5 73.4 88.6
35
3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
* The “G” suffix indicates Pb−Free package available.
http://onsemi.com
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