Philips Semiconductors
Low-voltage stabistors
Product specification
BZV86 series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
BZV86-1V4
BZV86-2V0
BZV86-2V6
BZV86-3V2
IR
reverse current
rdif
differential resistance
BZV86-1V4
BZV86-2V0
BZV86-2V6
BZV86-3V2
rdif
differential resistance
BZV86-1V4
BZV86-2V0
BZV86-2V6
BZV86-3V2
rdif
differential resistance
BZV86-1V4
BZV86-2V0
BZV86-2V6
BZV86-3V2
SF
temperature coefficient
BZV86-1V4
BZV86-2V0
BZV86-2V6
BZV86-3V2
Cd
diode capacitance
CONDITIONS
IF = 5 mA; see Fig.2
VR = 5 V
IF = 1 mA; f = 1 kHz
IF = 5 mA; f = 1 kHz
IF = 10 mA; f = 1 kHz
IF = 5 mA
VR = 0 V; f = 1 MHz
MIN. TYP. MAX. UNIT
1.30
−
1.50 V
1.85
−
2.15 V
2.35
−
2.80 V
2.85
−
3.45 V
−
− 200
nA
−
55
−
Ω
−
80
−
Ω
−
90
−
Ω
−
100
−
Ω
−
10
20
Ω
−
15
30
Ω
−
18
32.5 Ω
−
20
35
Ω
−
6
10
Ω
−
8
15
Ω
−
9
17.5 Ω
−
10
20
Ω
−
−3.8
−
mV/K
−
−6.0
−
mV/K
−
−8.5
−
mV/K
−
−11.5
−
mV/K
−
15
25
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
8 mm from the body
lead length 10 mm
VALUE
300
380
UNIT
K/W
K/W
1996 Mar 21
3