TGF4230 데이터 시트보기 (PDF) - TriQuint Semiconductor

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TGF4230

Discr 1.2mm ete HFET

TriQuint Semiconductor 

TGF4230-EEU

GAIN VS.

INPUT POWER

DRAIN CURRENT

VS. INPUT POWER

12

F =8.5GHz

V D =8.0V

I Q =50mA*

11

T A =25°C

10

9

8

7

4

6

8

10 12 14 16 18 20 22

Input Power (dBm)

180

160

140

120

100

F =8.5GHz

V D =8.0V

I Q =50mA*

T A =25°C

80

60

40

4

6

8

10 12 14 16 18 20 22

Input Power (dBm)

ABSOLUTE

MAXIMUM RATINGS

Drain - to- source Voltage, VDS. ................................................................................................................ 12 V

Gate - to- source Voltage, VGS ...................................................................................................... - 5 V to 0 V

Mounting temperatur e (30 sec), TM .................................................................................................. 320 C

Storage temperature range, TSTG ............................................................ ................................ - 65 to 200 C

Power dissipation, PD .................................................................................. (see thermal data on next page)

Operating channel temperature, TCH .............................................................. (see thermal data on next page)

Ratings over base-plate temperature range TBP (unless otherwise noted)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those indicated “RF and DC Characteristics” is not implied. Exposure to absolute maximum rated conditions for

extended periods of time may affect device reliability.

3

TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com

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