BYT08P800A 데이터 시트보기 (PDF) - Vishay Semiconductors

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BYT08P800A

Fast Recovery Silicon Power Rectifier

Vishay Semiconductors 

BYT08P/600A/800A

Vishay Telefunken

Electrical Characteristics

Tj = 25_C

Parameter

Forward voltage

Reverse current

Forward recovery time

Turn on transient peak voltage

Reverse recovery characteristics

Reverse recovery time

Reverse recovery current

Reverse recovery time

Test Conditions

IF=8A

IF=8A, Tj=100°C

VR=VRRM

x VR=VRRM, Tj=100°C

IF=8A; diF/dt 50A/ms

x IF=8A, diF/dt –32A/ms,

x VBatt=200V, Tj=100°C

IF=8A, diF/dt –32A/ms,

VBatt=200V, Tj=100°C,

iR=0.25xIRM

x IF=0.5A, IR=1A, iR=0.25A

IF=1A, diF/dt –50A/ms,

x VBatt=200V

IF=1A, diF/dt –50A/ms,

VBatt=200V, iR=0.25xIRM

Type Symbol Min Typ Max Unit

VF

1.9 V

VF

1.8 V

IR

35 mA

IR

2 mA

tfr

350

ns

VFP

4,5 V

IRM

4A

tIRM

160 ns

trr

100

ns

trr

50 ns

IRM

1.7

A

trr

75

ns

Characteristics (Tj = 25_C unless otherwise specified)

1000

10

100

10

VR=VRRM

1

0.1

0

94 9357

40

80

120 160 200

Tj – Junction Temperature ( °C )

Figure 1. Typ. Reverse Current vs. Junction Temperature

8

RthJA=8K/W

6

RthJC=2K/W

10K/W

4

20K/W

2

0 85K/W

0

40

80

120 160 200

94 9355

Tamb – Ambient Temperature ( °C )

Figure 2. Max. Average Forward Current vs.

Ambient Temperature

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2 (5)

Document Number 86017

Rev. 3, 24-Jun-98

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