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BYP303 데이터 시트보기 (PDF) - Siemens AG

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BYP303
Siemens
Siemens AG Siemens
BYP303 Datasheet PDF : 3 Pages
1 2 3
FRED Diode
• Fast recovery epitaxial diode
• Soft recovery characteristics
BYP 303
Type
BYP 303
VRRM
1200V
IFRMS
65A
trr
140ns
Package
TO-218 AD
Maximum Ratings
Parameter
Mean forward current
TC = 90 °C, D = 0.5
RMS forward current
Surge forward current, sine halfwave, aperiodic
Tj = 100 °C, f = 50 Hz
Repetitive peak forward current
Tj = 100 °C, tp 10 µs
i 2t value
Tj = 100 °C, tp = 10 ms
Repetitive peak reverse voltage
Surge peak reverse voltage
Power dissipation
TC = 90 °C
Chip or operating temperature
Storage temperature
Symbol
IFAV
IFRMS
IFSM
IFRM
i2dt
VRRM
VRSM
Ptot
Tj
Tstg
Thermal resistance, chip case
Thermal resistance, chip-ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
RthJC
RthJA
-
-
Ordering Code
C67047-A2253-A2
Values
Unit
A
40
65
170
370
A2s
145
1200
V
1200
W
120
-40 ... + 150 °C
-40 ... + 150
0.5
K/W
46
E
-
40 / 150 / 56
Semiconductor Group
1
12.96

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