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BYG10D(2014) 데이터 시트보기 (PDF) - Vishay Semiconductors

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BYG10D
(Rev.:2014)
Vishay
Vishay Semiconductors Vishay
BYG10D Datasheet PDF : 5 Pages
1 2 3 4 5
BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y
www.vishay.com
Vishay General Semiconductor
Standard Avalanche SMD Rectifier
DO-214AC (SMA)
FEATURES
• Low profile package
• Ideal for automated placement
• Controlled avalanche characteristics
• Glass passivated junction
• Low reverse current
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
1.5 A
200 V, 400 V, 600 V, 800 V,
1000 V, 1600 V
IFSM
IR
VF
ER
TJ max.
Package
30 A
1.0 μA
1.15 V
20 mJ
150 °C
DO-214AC (SMA)
Diode variations
Single die
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per J-STD-002
and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Note
• BYG10Y for commercial grade only
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT
Device marking code
BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y
Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
1000
1600
V
Average forward current
IF(AV)
1.5
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
30
A
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
I(BR)R = 1 A, TJ = 25 °C (for BYG10D thru BYG10M)
ER
I(BR)R = 0.4 A, TJ = 25 °C (for BYG10Y)
20
mJ
Operating junction and storage temperature range TJ, TSTG
- 55 to + 150
°C
Revision: 15-Jan-14
1
Document Number: 89472
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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