BYG90-20 데이터 시트보기 (PDF) - Philips Electronics
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BYG90-20 Datasheet PDF : 7 Pages
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Philips Semiconductors
Schottky barrier rectifier diodes
Product specification
BYG90-40 series
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
see Fig.2; note 1
IF = 1 A
−
IF = 3 A
−
IF = 1 A; Tj = 100 °C
−
VR = VRRMmax; note 1; see Fig.3 −
VR = VRRMmax; Tj = 100 °C; note 1; −
see Fig.3
VR = 4 V; f = 1 MHz; see Fig.4
−
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
TYP.
−
−
−
−
−
−
MAX. UNIT
550
mV
850
mV
450
mV
1
mA
10
mA
75
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Refer to SOD106A standard mounting conditions.
CONDITIONS
note 1
VALUE UNIT
80
K/W
1996 May 06
4
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