C67078-S3111-A2 데이터 시트보기 (PDF) - Siemens AG
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C67078-S3111-A2 Datasheet PDF : 8 Pages
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BUZ 358
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
l
10
Ptot = 125W kj ihg f e
A
ID
8
7
6
5
4
3
2
1
d
VGS [V]
a 4.0
b 4.5
c 5.0
c
d 5.5
e 6.0
f 6.5
g 7.0
h 7.5
b i 8.0
j 9.0
k 10.0
l 20.0
a
0
0
10 20 30 40 50 V 65
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
6.0
A
5.0
ID
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
8.0
Ω
RDS (on)
6.0
a
b
5.0
4.0
c
d
3.0
e
ighf j
k
2.0
1.0 VGS [V] =
abc def
4.50 5.0 5.5 6.0 6.5 7.0
0.0
ghi j k
7.5 8.0 9.0 10.0 20.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 A 7.5
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
7.0
S
6.0
gfs 5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 A 4.0
ID
Semiconductor Group
6
01/97
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