BUZ 101L
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 29 A, VDD = 25 V
RGS = 25 Ω, L = 83 µH
75
mJ
65
EAS 60
55
50
45
40
35
30
25
20
15
10
5
0
20 40 60 80 100 120 140 °C 180
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 44 A
16
V
VGS
12
10
8
0,2 VDS max
0,8 VDS max
6
4
2
0
0 5 10 15 20 25 30 35 nC 45
QGate
62
V
60
V(BR)DSS 59
58
57
56
55
54
53
52
51
50
49
48
47
-60 -20
20
60 100 °C 180
Tj
Semiconductor Group
8
07/96