BUW13A 데이터 시트보기 (PDF) - Inchange Semiconductor
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BUW13A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BUW13
BUW13A
IC=0.1A ; IB=0; L=25mH
VCEsat
Collector-emitter
saturation voltage
BUW13 IC=10A; IB=2A
BUW13A IC=8A; IB=1.6A
VBEsat
ICES
IEBO
Base-emitter
saturation voltage
BUW13 IC=10A; IB=2A
BUW13A IC=8A; IB=1.6A
Collector cut-off current
VCE=Rated VCES; VBE=0
TC=125℃
Emitter cut-off current
VEB=9V; IC=0
hFE-1
DC current gain
IC=20mA ; VCE=5V
hFE-2
DC current gain
Switching times resistive load
IC=1.5A ; VCE=5V
ton
Turn-on time
ts
Storage time
tf
Fall time
For BUW13
IC=10A ;IB1=-IB2=2A
For BUW13A
IC=8A ;IB1=-IB2=1.6A
Product Specification
BUW13 BUW13A
MIN TYP. MAX UNIT
400
V
450
1.5
V
1.6
V
1.0
4.0
mA
10
mA
10
35
10
35
1.0
μs
4.0
μs
0.8
μs
2
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