BT152-600R 데이터 시트보기 (PDF) - Comset Semiconductors

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BT152-600R

THYRISTORS

Comset Semiconductors 

SEMICONDUCTORS

BT152 Series

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

VDRM

VRRM

IGT

VGT

IL

IH

ID

IR

VT

Repetitive peak

off-state voltage

Repetitive peak reverse

voltage

BT152-400R 450 -

BT152-600R 650 -

BT152-800R 800 -

BT152-400R 450 -

BT152-600R 650 -

BT152-800R 800 -

-

-

-

-

V

-

-

Gate trigger current

Gate trigger voltage

Latching current

Holding current

VD = 12 V; IT = 100 mA

VD = 12 V; IT = 100 mA

VD = 12 V; IGT = 100 mA

VD = 12 V; IGT = 100 mA

-

-

32 mA

-

-

1.5 V

-

-

80 mA

-

-

60 mA

Off-state current

VD = VDRM max; Tj = 125°C

-

-

1 mA

Reverse current

On-state voltage

VR = VRRM max; Tj = 125°C

IT = 40 A

-

-

1 mA

-

- 1.75 V

DYNAMIC CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

dVD/dt

tgt

Critical rate of rise of

off-state voltage

Gate controlled

turn-on time

tq

Circuit commutated

Turn-off time

Test Condition(s)

VDM = 67% VDRMmax

Tj = 125°C

Exponential waveform; gate

open circuit

ITM = 40 A; VD = VDRMmax

IG = 0.1 A; dIG/dt = 5 A/µs

VDM = 67% VDRMmax

Tj = 125°C

ITM = 50 A; VR = 25 V

RGK = 100 Ω

dITM/dt = 30 A/µs

dVD/dt = 50 V/µS

Min Typ Max Unit

200 300

- V/µs

-

2

- µs

-

70

- µs

26/09/2012

COMSET SEMICONDUCTORS

2|3

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