BT151-500RT 데이터 시트보기 (PDF) - NXP Semiconductors.
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BT151-500RT Datasheet PDF : 11 Pages
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NXP Semiconductors
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Dynamic charateristics
dVD/dt
rate of rise of off-state VDM = 335 V; Tj = 125 °C; gate open
voltage
circuit; see Figure 7
tgt
gate-controlled turn-on
time
tq
commutated turn-off
time
Static characteristics
VDM = 335 V; Tj = 125 °C; RGK = 100 Ω
ITM = 40 A; VD = 500 V; IG = 100 mA;
dIG/dt = 5 A/µs
VDM = 335 V; Tj = 125 °C; ITM = 20 A;
VR = 25 V; (dIT/dt)M = 30 A/µs;
dVD/dt = 50 V/µs; RGK = 100 Ω
IGT
gate trigger current
VD = 12 V; Tj = 25 °C; IT = 100 mA;
see Figure 8
IL
latching current
VD = 12 V; Tj = 25 °C; IG = 100 mA;
see Figure 9
IH
holding current
Tj = 25 °C; see Figure 10
VT
on-state voltage
IT = 23 A; Tj = 25 °C; see Figure 11
VGT
gate trigger voltage
IT = 100 mA; VD = 12 V; Tj = 25 °C;
see Figure 12
IT = 100 mA; VD = 500 V; Tj = 125 °C
ID
off-state current
VD = 500 V; Tj = 125 °C
IR
reverse current
VR = 500 V; Tj = 125 °C
104
dVD/dt
(V/μs)
(1)
103
(2)
102
001aaa949
3
IGT
IGT(25°C)
2
1
BT151-500RT
SCR, 12 A, 15 mA, 500 V, SOT78
Min Typ Max Unit
50
130 -
200 1000 -
-
2
-
-
70
-
V/µs
V/µs
µs
µs
-
2
-
10
-
7
-
1.4
-
0.6
0.25 0.4
-
0.1
-
0.1
15
mA
40
mA
20
mA
1.75 V
1.5 V
-
V
0.5 mA
0.5 mA
003aab824
10
0
50
100
150
Tj (°C)
Fig 7. Critical rate of rise of off-state voltage as a
function of junction temperature; minimum
values
0
−50
0
50
100
150
Tj (°C)
Fig 8. Normalized gate trigger current as a function of
junction temperature
BT151-500RT_1
Product data sheet
Rev. 01 — 18 May 2009
© NXP B.V. 2009. All rights reserved.
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