BT258B 데이터 시트보기 (PDF) - Philips Electronics
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BT258B Datasheet PDF : 6 Pages
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Philips Semiconductors
Thyristors
logic level
Product specification
BT258B series
Ptot / W
8
conduction form
7
angle
degrees
factor
a
30
4
6
60
2.8
90
2.2
5
120
1.9
180
1.57
4
4
BT150
2.2
2.8
Tmb(max) / C
109
a = 1.57
111
1.9
113
115
117
3
119
2
121
1
123
0
125
0
1
2
3
4
5
6
IT(AV) / A
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
a = form factor = IT(RMS)/ IT(AV).
1000 ITSM / A
BT150
dI T/dt limit
100
IT
ITSM
T time
Tj initial = 25 C max
10
10us
100us
1ms
T/s
10ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
IT(RMS) / A
9
8
BT258
111 C
7
6
5
4
3
2
1
0-50
0
50
100
150
Tmb / C
Fig.3. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
80 ITSM / A
BT258
70
IT
ITSM
60
T time
50
Tj initial = 25 C max
40
30
20
10
01
10
100
1000
Number of half cycles at 50Hz
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
24 IT(RMS) / A
BT150
20
16
12
8
4
0
0.01
0.1
1
10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 111˚C.
VGT(Tj)
1.6 VGT(25 C)
BT151
1.4
1.2
1
0.8
0.6
0.4-50
0
50
100
150
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997
3
Rev 1.100
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