BT152-800R 데이터 시트보기 (PDF) - Philips Electronics
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BT152-800R Datasheet PDF : 6 Pages
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Philips Semiconductors
Thyristors
Product specification
BT152 series
GENERAL DESCRIPTION
Glass passivated thyristors in a plastic
envelope, intended for use in
applications
requiring
high
bidirectional blocking voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
BT152- 400R 600R 800R
Repetitive peak off-state
450 650 800 V
voltages
Average on-state current
13 13 13 A
RMS on-state current
20 20 20 A
Non-repetitive peak on-state 200 200 200 A
current
PINNING - TO220AB
PIN
DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
PIN CONFIGURATION
tab
1 23
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Repetitive peak off-state
-
voltages
Average on-state current half sine wave; Tmb ≤ 103 ˚C
-
RMS on-state current
all conduction angles
-
Non-repetitive peak
on-state current
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
-
t = 8.3 ms
-
I2t for fusing
t = 10 ms
-
Repetitive rate of rise of ITM = 50 A; IG = 0.2 A;
-
on-state current after
dIG/dt = 0.2 A/µs
triggering
Peak gate current
-
Peak gate voltage
-
Peak reverse gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
MAX.
-400R -600R -800R
4501 6501 800
13
20
200
220
200
200
5
5
5
20
0.5
150
125
UNIT
V
A
A
A
A
A2s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
March 1997
1
Rev 1.200
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