BT148W 데이터 시트보기 (PDF) - Philips Electronics
부품명
상세내역
일치하는 목록
BT148W Datasheet PDF : 7 Pages
| |||
Philips Semiconductors
Thyristors
logic level
Product specification
BT148W series
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristors in a plastic envelope
suitable for surface mounting,
intended for use in general purpose
switching and phase control
applications. These devices are
intended to be interfaced directly to
microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
BT148W- 400R 500R 600R
Repetitive peak off-state
400 500 600 V
voltages
Average on-state current
0.6 0.6 0.6 A
RMS on-state current
1
1
1A
Non-repetitive peak on-state 10 10 10 A
current
PINNING - SOT223
PIN
DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
PIN CONFIGURATION
4
1
2
3
SYMBOL
a
k
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM, VRRM Repetitive peak off-state
-
voltages
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current half sine wave; Tsp ≤ 112 ˚C
-
RMS on-state current
all conduction angles
-
Non-repetitive peak
on-state current
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
-
t = 8.3 ms
-
I2t for fusing
t = 10 ms
-
Repetitive rate of rise of ITM = 4 A; IG = 200 mA;
-
on-state current after
dIG/dt = 200 mA/µs
triggering
Peak gate current
-
Peak gate voltage
-
Peak reverse gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
MAX.
-400R -500R -600R
4001 5001 6001
0.6
1
10
11
0.5
50
1
5
5
1.2
0.12
150
1252
UNIT
V
A
A
A
A
A2s
A/µs
A
V
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
October 1997
1
Rev 1.300
Share Link: 