BSM200GA170DN2 데이터 시트보기 (PDF) - eupec GmbH

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BSM200GA170DN2

IGBT Power Module

eupec GmbH 

BSM 200 GA 170 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

min.

typ.

max.

Static Characteristics

Gate threshold voltage

VGE(th)

VGE = VCE, IC = 16 mA

4.8

5.5

6.2

Collector-emitter saturation voltage

VCE(sat)

VGE = 15 V, IC = 200 A, Tj = 25 °C

-

3.4

3.9

VGE = 15 V, IC = 200 A, Tj = 125 °C

-

4.6

5.3

Zero gate voltage collector current

ICES

VCE = 1700 V, VGE = 0 V, Tj = 25 °C

-

1.6

2

VCE = 1700 V, VGE = 0 V, Tj = 125 °C

-

6.4

-

Gate-emitter leakage current

IGES

VGE = 20 V, VCE = 0 V

-

-

320

AC Characteristics

Transconductance

VCE = 20 V, IC = 200 A

Input capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Output capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Reverse transfer capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

gfs

72

Ciss

-

Coss

-

Crss

-

-

-

32

-

2.5

-

1

-

Unit

V

mA

nA

S

nF

2

Oct-27-1997

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