BS62LV1027 데이터 시트보기 (PDF) - Brilliance Semiconductor

부품명

상세내역

일치하는 목록

BS62LV1027

Very Low Power CMOS SRAM 128K X 8 bit

Brilliance Semiconductor 

n SWITCHING WAVEFORMS (READ CYCLE)

READ CYCLE 1 (1,2,4)

tRC

ADDRESS

DOUT

tAA

tOH

READ CYCLE 2 (1,3,4)

CE1

CE2

DOUT

tACS1

tACS2

tCLZ(5)

READ CYCLE 3 (1, 4)

ADDRESS

OE

CE1

CE2

DOUT

tRC

tAA

tOE

tOLZ

tCLZ1(5)tACS1

tACS2

tCLZ2(5)

NOTES:

1. WE is high in read Cycle.

2. Device is continuously selected when CE1 = VIL and CE2= VIH.

3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.

4. OE = VIL.

5. Transition is measured ± 500mV from steady state with CL = 5pF.

The parameter is guaranteed but not 100% tested.

R0201-BS62LV1027

5

BS62LV1027

tOH

tCHZ1, tCHZ2(5)

tOH

tOHZ(5)

tCHZ1(1,5)

tCHZ2(2,5)

Revision 2.3

May.

2006

Share Link: