BS616LV2021DI-10 데이터 시트보기 (PDF) - Brilliance Semiconductor

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BS616LV2021DI-10

Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

Brilliance Semiconductor 

BSI

BS616LV2021

„ DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC)

PARAMETER

NAME

VIL

PARAMETER

Guaranteed Input Low

Voltage(2)

VIH

Guaranteed Input High

Voltage(2)

IIL

Input Leakage Current

TEST CONDITIONS

MIN. TYP.(1) MAX. UNITS

Vcc=3V

-0.5 --

0.8

V

Vcc=5V

Vcc=3V 2.0

--

Vcc+0.2

V

Vcc=5V 2.2

Vcc = Max, VIN = 0V to Vcc

--

--

1

uA

IOL

Output Leakage Current

Vcc = Max, CE1 = VIH or CE2=VIL or OE = VIH,

VI/O = 0V to Vcc

--

--

1

uA

VOL

VOH

Output Low Voltage

Output High Voltage

Vcc = Max, IOL= 2mA

Vcc = Min, IOH= -1mA

Vcc=3V

--

--

0.4

V

Vcc=5V

Vcc=3V

2.4 --

--

V

Vcc=5V

ICC

Operating Power Supply Vcc = Max, CE1= VIL, CE2=VIH

Current

IDQ = 0mA, F = Fmax(3)

Vcc=3V --

--

20

mA

Vcc=5V --

--

40

ICCSB

Standby Current-TTL

Vcc = Max, CE1 = VIH or CE2=VIL

Vcc=3V --

--

0.5

IDQ = 0mA

Vcc=5V --

--

1

mA

ICCSB1

Standby Current-CMOS

Vcc = Max, CE1ЊVcc-0.2V or

CE2Љ0.2V,

Other inputsЊVcc - 0.2V or

VINЉ0.2V

Vcc=3V --

0.1

0.7

uA

Vcc=5V --

0.6

6

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/tRC .

R0201-BS616LV2021

4

Revision 2.4

April 2002

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