BS616LV1012 데이터 시트보기 (PDF) - Brilliance Semiconductor
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BS616LV1012 Datasheet PDF : 9 Pages
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BSI
BS616LV1012
ABSOLUTE MAXIMUM RATINGS(1)
OPERATING RANGE
SYMBOL
V TERM
V cc
T BIAS
PARAMETER
Terminal Voltage with
Respect to GND
Power Supply Voltage
Temperature Under Bias
RATING
-0.5 to
Vcc+0.5
-0.5 to
Vcc+0.5
-40 to +85
UNITS
V
V
OC
RANGE
Commercial
Industrial
AMBIENT
TEMPERATURE
0 O C to +70 O C
-40 O C to +85 O C
Vcc
2.4V ~ 3.6V
2.4V ~ 3.6V
T STG
PT
Storage Temperature
Power Dissipation
-60 to +150
OC
1.0
W
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
I OUT
DC Output Current
20
mA
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
SYMBOL
CIN
CDQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
VIN=0V
VI/O=0V
MAX. UNIT
6
pF
8
pF
1. This parameter is guaranteed and not 100% tested.
DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
PARAMETER
NAME
VIL
VIH
IIL
PARAMETER
Guaranteed Input Low
Voltage(2)
Guaranteed Input High
Voltage(3)
Input Leakage Current
TEST CONDITIONS
Vcc=3.0V
Vcc = Max, VIN = 0V to Vcc
Vcc=3.0V
MIN. TYP. (1) MAX.
UNITS
-0.5
--
0.8
V
2.0
--
Vcc+0.3
V
--
--
1
uA
ILO
Output Leakage Current
Vcc = Max, CE = VIH, or OE = VIH,
VI/O = 0V to Vcc
--
--
1
uA
VOL
Output Low Voltage
Vcc = Max, IOL = 2mA
Vcc=3.0V
--
--
0.4
V
VOH
Output High Voltage
Vcc = Min, IOH = -1mA
Vcc=3.0V
2.4
--
(6)
ICC
Operating Power Supply CE = VIL, IDQ = 0mA,
Current
F = Fmax (4)
55ns
70ns
Vcc=3.0V
--
--
--
V
23
mA
18
ICCSB
Standby Current-TTL
CE = VIH, IDQ = 0mA
Vcc=3.0V
--
--
1
mA
(5)
ICCSB1
Standby Current-CMOS
CE ≧ Vcc -0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
Vcc=3.0V
--
0.4
2.5
uA
1. Typical characteristics are at TA = 25oC.
3. Overshoot : Vcc+1.5V in case of pulse width ≦20ns.
5. IccsB1_Max. is 1.3uA at Vcc=3.0V and TA=70oC.
2. Undershoot : -1.5V in case of pulse width ≦20ns.
4. Fmax = 1/tRC .
6. Icc_Max. is 22mA(@55ns) / 17mA(@70ns) at Vcc=3.0V and TA=0~70oC.
DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
CE ≧ Vcc - 0.2V
VDR
Vcc for Data Retention
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
1.5
--
--
V
ICCDR(3)
Data Retention Current
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
--
0.15
0.8
uA
tCDR
Chip Deselect to Data
Retention Time
tR
Operation Recovery Time
See Retention Waveform
0
--
--
ns
TRC (2)
--
--
ns
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
3. IccDR_MAX. is 0.45uA at TA=70OC.
R0201-BS616LV1012
3
Revision 1.0
Apr. 2004
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