BS616LV1011 데이터 시트보기 (PDF) - Brilliance Semiconductor
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BS616LV1011 Datasheet PDF : 9 Pages
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BSI
BS616LV1011
AC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
WRITE CYCLE
JEDEC
PARAMETER
NAME
tAVAX
t
E1LWH
t
AVWL
tAVWH
t
WLWH
t
WHAX
tBW
tWLQZ
tDVWH
tWHDX
t
GHQZ
PARAMETER
NAME
tWC
tCW
tAS
tAW
tWP
tWR
t (1)
BW
tWHZ
tDW
tDH
tOHZ
DESCRIPTION
Write Cycle Time
Chip Select to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width
Write recovery Time
(CE,WE)
Date Byte Control to End of Write
(LB,UB)
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
CYCLE TIME : 55ns
(Vcc = 2.8~5.5V)
MIN. TYP. MAX.
55
--
--
55 --
--
0
--
--
55 --
--
35 --
--
0
--
--
35 --
--
--
--
25
35 --
--
0
--
--
--
--
20
tWHOX
tOW
End of Write to Output Active
5
--
--
CYCLE TIME : 70ns
(Vcc = 2.5~5.5V)
MIN. TYP. MAX.
70 --
--
70 --
--
0
--
--
70 --
--
45 --
--
0
--
--
45 --
--
--
--
30
40 --
--
0
--
--
--
--
25
5
--
--
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTE :
1. tBW is 35ns/45ns (@speed=55ns/70ns) with address toggle. ; tBW is 55ns/70ns (@speed=55ns/70ns) without address toggle.
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t WC
ADDRESS
OE
CE
(11)
t CW
(5)
(3)
t WR
LB,UB
WE
D OUT
t AS
(4,10)
t OHZ
t BW
t AW
(3)
t WP
(2)
t DW
t DH
D IN
R0201-BS616LV1011
6
Revision 1.0
Apr. 2004
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