BLF277 데이터 시트보기 (PDF) - Philips Electronics
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BLF277 Datasheet PDF : 13 Pages
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Philips Semiconductors
VHF power MOS transistor
Product specification
BLF277
handbook0, .h4alfpage
RDS(on)
(Ω)
0.3
MGP222
0.2
0.1
0
0
50
ID = 5 A; VGS = 10 V.
100 Tj (°C) 150
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values.
1200
handbook, halfpage
C
(pF)
800
MGE615
Cis
400
Cos
0
0
20
VGS = 0; f = 1 MHz.
40
60
VDS (V)
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
150
handbook, halfpage
Crs
(pF)
100
MGP223
50
0
0
20
VGS = 0; f = 1 MHz.
40 VDS (V) 60
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
September 1992
5
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