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BFQ246 데이터 시트보기 (PDF) - Philips Electronics

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BFQ246
Philips
Philips Electronics Philips
BFQ246 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Philips Semiconductors
PNP video transistor
Product specification
BFQ246
103
handbook, halfpage
IC
(mA)
102
10
10
MBG511
102
VCE (V)
103
4
handbook, halfpage
Ptot
(W)
3
2
1
0
0
MBG512
100
Ts (oC)
200
Ts = 60 °C.
Fig.2 DC SOAR.
VCE ≤ −50 V.
Fig.3 Power derating curve.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to
soldering point
CONDITIONS
Ptot = 3 W; up to Ts = 60 °C; note 1
Note
1. Ts is the temperature of the soldering point of the collector pin.
VALUE
38.5
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO
V(BR)CER
V(BR)EBO
ICES
hFE
fT
Cre
collector-base breakdown voltage IC = 0.1 mA; IE = 0
collector-emitter breakdown voltage IC = 1 mA; RBE = 100
emitter-base breakdown voltage IC = 0; IE = 0.1 mA
collector-emitter leakage current VCE = 50 V; VBE = 0
DC current gain
IC = 25 mA; VCE = 10 V;
see Fig.4
transition frequency
IC = 25 mA; VCE = 10 V;
f = 500 MHz; see Fig.5
feedback capacitance
IC = 0; VCB = 10 V;
f = 1 MHz; see Fig.6
1996 Sep 04
3
MIN.
100
95
3
20
TYP.
MAX.
100
UNIT
V
V
V
µA
1
GHz
1.7
pF

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