BFQ235A 데이터 시트보기 (PDF) - Philips Electronics
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BFQ235A Datasheet PDF : 8 Pages
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Discrete Semiconductors
NPN video transistor
Product specification
BFQ235A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point Ts ≤ 100 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
VALUE
25
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)CBO
V(BR)CEO
V(BR)CER
collector-base breakdown voltage IC = 0.1 mA; IE = 0
collector-emitter breakdown voltage IC = 10 mA; IB = 0
collector-emitter breakdown voltage IC = 10 mA; RBE = 100 Ω
115 −
95 −
110 −
V(BR)EBO
ICES
ICBO
emitter-base breakdown voltage
collector cut-off current
collector cut-off current
IE = 0.1 mA; IC = 0
IB = 0; VCE = 50 V
IE = 0; VCB = 50 V
3
−
−
−
−
−
hFE
DC current gain
IC = 50 mA; VCE = 10 V; Tamb = 25 °C; 20 35
see Fig.4
fT
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz; 0.8 1.2
Tamb = 25 °C; see Fig.6
Ccb
collector-base capacitance
IC = 0; VCB = 10 V; f = 1 MHz;
Tamb = 25 °C; see Fig.5
−
2
−
V
−
V
−
V
−
V
100 µA
20 µA
−
−
GHz
−
pF
handboo4k,0h0alfpage
IC
(mA)
300
MBB887
200
100
0
0
20
40
60
80
VCEO (V)
handbook, h4alfpage
Ptot
(W)
3
MBB888
2
1
0
0
50
100
150
200
Ts (oC)
1998 Oct 06
Fig.2 DC SOAR.
Fig.3 Power derating curve.
3
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